The IS220PDOAH1B is a high-performance semiconductor device produced by General Electric(GE),specifically,it is an IGBT insulated gate bipolar transistor module.IGBT is a kind of power electronic device which integrates the advantages of bipolar transistor and MOSFET.It has the characteristics of high efficiency,high power density and fast switching,and is widely used in the field of power electronics.
Product parameter
Model:IS220PDOAH1B
Brand:GE(General Electric)
Type:IGBT module
Function:High voltage,high current power conversion
Parameters:
Voltage rating:thousands of volts
Current rating:hundreds of amps
Switching speed:nanosecond
Package type:Usually flat package
Cooling method:forced air cooling or water cooling
Product application
Because of its excellent performance,IGBT modules are widely used in various power electronic equipment,such as:
Power electronics:Used in high voltage direct current transmission(HVDC),static reactive power compensation(SVC),renewable energy grid connection,etc.
Industrial drive:Used in large motor drive,metallurgy,mining and other industries of electric drive system.
Power system:used for power grid fault protection,reactive power compensation,etc.
Brand introduction
GE(General Electric)is a leading global technology company with businesses in energy,healthcare,aviation and many other fields.GE’s power electronics product line has a long history,and its IGBT modules are known for high reliability,high performance and a wide range of applications.
